- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
12 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
917
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 4.5 mOhms | PowerTrench | ||||||
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Ein Angebot |
1,876
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 67 A | 9.3 mOhms | 2 V | 65 nC | Enhancement | ||||
|
Ein Angebot |
884
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V N-CHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 67 A | 12.8 mOhms | ||||||||
|
Ein Angebot |
4,102
Verfügbar auf Lager
|
ON Semiconductor | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 3.4 mOhms | 1.3 V | 36 nC | Enhancement | ||||
|
Ein Angebot |
15
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement | Power MOS V | |||||
|
Ein Angebot |
30
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 67 A | 38 mOhms | 2 V | 225 nC | Enhancement | |||||
|
Ein Angebot |
4,000
Verfügbar auf Lager
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 67 A | 9 mOhms | 97 nC | Enhancement | Directfet | ||||
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siehe | Nexperia | MOSFET HIGH PERF TRENCHMOS | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 67 A | 14 mOhms | Enhancement | |||||||
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siehe | IXYS | MOSFET 67 Amps 100V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | HyperFET | ||||||
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siehe | IXYS | MOSFET 67 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | |||||||
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siehe | IXYS | MOSFET 67 Amps 150V 0.028 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 67 A | 28 mOhms | Enhancement | HyperFET | ||||||
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Ein Angebot |
12
Verfügbar auf Lager
|
Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 67 A | 38 mOhms | 4 V | 148 nC | Enhancement |
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