- Hersteller :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,491
Verfügbar auf Lager
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Infineon Technologies | MOSFET Automotive HEXFET COOLiRFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.3 mOhms | 3.9 V | 65 nC | Enhancement | ||
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Ein Angebot |
4,604
Verfügbar auf Lager
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Infineon / IR | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 43 A | 10 mOhms | 3.9 V | 22 nC | Enhancement |
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