- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
88,000
Verfügbar auf Lager
|
Central Semiconductor | MOSFET SMD- Small Signal N-Channel Mosfet | 10 V | SMD/SMT | SOT-953-5 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 200 mA | 1.3 Ohms | 0.9 V | 0.566 nC | Enhancement | ||
|
|
|
Ein Angebot |
96,000
Verfügbar auf Lager
|
Central Semiconductor | MOSFET SMD- Small Signal P-Channel Mosfet | 10 V | SMD/SMT | SOT-953-5 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 2.4 Ohms | 1.1 V | 0.658 nC | Enhancement |
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