- Hersteller :
- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
9 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,400
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 40 mOhms | Enhancement | ||||
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Ein Angebot |
1,228
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 360 mA | 2.2 Ohms | - 2 V | 5.3 nC | Enhancement | ||
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Ein Angebot |
5,654
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | 12 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 85 mOhms | - 1.3 V | 11.6 nC | Enhancement | ||
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|
Ein Angebot |
6,454
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 50.6 nC | Enhancement | ||
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Ein Angebot |
3,074
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 170 mOhms | Enhancement | ||||
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Ein Angebot |
2,471
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | ||
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Ein Angebot |
3,755
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 20V 1.2A | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 100 mOhms | 500 mV | Enhancement | |||
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siehe | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V | SC-59-3 | Reel | 1 Channel | Si | N-Channel | |||||||||||||
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siehe | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V | SC-59-3 | Reel | 1 Channel | Si | N-Channel |
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