- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
341
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W | 12 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 220 mA | 4.5 Ohms | 1 V | 0.35 nC | Enhancement | ||
|
|
|
Ein Angebot |
20,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF | 8 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 990 mOhms | 1 V | 1 nC | Enhancement | ||
|
|
|
Ein Angebot |
9,905
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A | 10 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 10 Ohms | - 1 V | 0.35 nC | Enhancement |
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