- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,564
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 36 mOhms | - 1 V | 9.1 nC | Enhancement | ||
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Ein Angebot |
2,968
Verfügbar auf Lager
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Diodes Incorporated | MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 65 mOhms | - 1 V | 10 nC | Enhancement | ||
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Ein Angebot |
60
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 26 mOhms | - 1 V | 23.7 nC | Enhancement | ||
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Ein Angebot |
6,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 31 mOhms | - 1 V | 10 nC | Enhancement |
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