Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BUK9Y15-60E,115
1+
$0.2800
10+
$0.2328
100+
$0.1500
1000+
$0.1200
1500+
$0.1016
Ein Angebot
RFQ
4,825
Verfügbar auf Lager
Nexperia MOSFET N-channel 60 V 15 mo FET 15 V SMD/SMT LFPAK56-5 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 53 A 12.1 mOhms 1.7 V 17.2 nC Enhancement
BUK9Y15-100E,115
1+
$0.4120
10+
$0.3512
100+
$0.2696
500+
$0.2384
1000+
$0.1880
Ein Angebot
RFQ
1,574
Verfügbar auf Lager
Nexperia MOSFET N-channel TrenchMOS logic level FET 15 V SMD/SMT LFPAK56-5 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 69 A 12.1 mOhms 1.7 V 45.8 nC Enhancement