- Hersteller :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
5 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
992
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 18 mOhms | 1.6 V | 60 nC | Enhancement | ||||
|
Ein Angebot |
337
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | ||||
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siehe | Nexperia | MOSFET TRENCHPLUS MOSFET | 20 V | SMD/SMT | TO-263-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | |||||||
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siehe | Vishay / Siliconix | MOSFET 30V 50A 83W w/Sense Terminal | TO-263-5 | Reel | Si | TrenchFET | ||||||||||||||||
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siehe | Vishay / Siliconix | MOSFET 40V 60A 200W w/Sensing Diode | TO-263-5 | Reel | Si | TrenchFET |
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