- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,513
Verfügbar auf Lager
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | |||
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|
|
Ein Angebot |
2,900
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 66 mOhms | 350 mV | 16.8 nC | Enhancement | ||
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|
|
Ein Angebot |
2,803
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET | 12 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 23.8 mOhms | 500 mV | 9.4 nC | Enhancement | ||
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|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 8 V | SMD/SMT | UF6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.6 A, - 1.5 A | 247 mOhms, 430 mOhms | 350 mV, - 300 mV | 7.5 nC, 6.4 nC | Enhancement | |||
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siehe | Toshiba | MOSFET N-Ch FET 30V 1.6A 1V 500mW | UF6-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 1.6 A, - 1.4 A | 122 mOhms | ||||||||||
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siehe | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement |
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