- Hersteller :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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Ein Angebot |
439
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 40V 100A 2.1mOhm N-Chan Power Trench | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 30 A | 2.1 mOhms | Enhancement | PowerTrench | |||
|
Ein Angebot |
140
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 30 A | 140 mOhms | Enhancement | QFET | |||
|
siehe | Toshiba | MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 30 A | 52 mOhms | Enhancement |
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