- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
88
Verfügbar auf Lager
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 14 A | 910 mOhms | 2.5 V | 145 nC | Enhancement | |||
|
Ein Angebot |
25
Verfügbar auf Lager
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 820 mOhms | 2.5 V | 120 nC | Enhancement | |||
|
Ein Angebot |
2
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 880 mOhms | 4 V | 120 nC | Enhancement |
1 / 1 Seite