- Hersteller :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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Ein Angebot |
4,800
Verfügbar auf Lager
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Infineon Technologies | MOSFET DirectFET | SMD/SMT | DirectFET-S1 | Reel | Si | N-Channel | 25 V | 16 A | 5.6 mOhms | Directfet | ||||||||
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Ein Angebot |
4,395
Verfügbar auf Lager
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Infineon / IR | MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC | 20 V | SMD/SMT | DirectFET-S1 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 37 A | 5.9 mOhms | 1.8 V | 8.8 nC | |||
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siehe | Infineon / IR | MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC | 20 V | SMD/SMT | DirectFET-S1 | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 10.1 mOhms | 8.1 nC |
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