- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Id - Continuous Drain Current :
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- - 13 A (1)
- - 23 A (1)
- - 40 A (1)
- - 74 A (2)
- 10 A (1)
- 10.6 A (2)
- 100 A (12)
- 11 A (3)
- 110 A (6)
- 112 A (1)
- 12 A (2)
- 120 A (23)
- 123 A (1)
- 127 A (1)
- 13 A (1)
- 13.8 A (2)
- 130 A (2)
- 136 A (1)
- 140 A (1)
- 15 A (1)
- 150 A (1)
- 16 A (1)
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- 162 A (1)
- 17 A (1)
- 170 A (1)
- 173 A (1)
- 18 A (1)
- 180 A (2)
- 183 A (1)
- 19 A (1)
- 195 A (5)
- 198 A (1)
- 20.2 A (2)
- 21 A (2)
- 210 A (2)
- 23 A (1)
- 235 A (1)
- 24 A (1)
- 246 A (1)
- 25 A (2)
- 270 A (2)
- 280 A (1)
- 298 A (1)
- 31 A (2)
- 31.2 A (1)
- 320 A (1)
- 33 A (1)
- 34 A (1)
- 35 A (1)
- 36 A (1)
- 382 A (1)
- 386 A (1)
- 426 A (1)
- 43 A (2)
- 45 A (1)
- 47 A (3)
- 49 A (1)
- 5.1 A (1)
- 50 A (6)
- 51 A (1)
- 56 A (2)
- 57 A (2)
- 58 A (2)
- 59 A (1)
- 6.9 A (1)
- 61 A (1)
- 64 A (1)
- 7.3 A (1)
- 7.4 A (1)
- 70 A (5)
- 72 A (1)
- 76 A (1)
- 80 A (13)
- 83.4 A (1)
- 85 A (2)
- 88 A (1)
- 9 A (2)
- 94 A (1)
- 97 A (1)
- 99 A (1)
- Rds On - Drain-Source Resistance :
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- 1.2 mOhms (1)
- 1.2 Ohms (1)
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- 1.8 mOhms (2)
- 10.3 mOhms (1)
- 10.5 mOhms (1)
- 10.7 mOhms (1)
- 11.3 mOhms (1)
- 110 mOhms (1)
- 117 mOhms (1)
- 12 mOhms (2)
- 12.3 mOhms (1)
- 12.6 mOhms (1)
- 125 mOhms (1)
- 13.9 mOhms (2)
- 14.7 mOhms (1)
- 140 mOhms (1)
- 145 mOhms (1)
- 15.4 mOhms (1)
- 15.5 mOhms (1)
- 150 mOhms (1)
- 16 mOhms (1)
- 17.5 mOhms (1)
- 18 mOhms (3)
- 190 mOhms (2)
- 199 mOhms (3)
- 2 mOhms (3)
- 2 Ohms (1)
- 2.2 mOhms (1)
- 2.2 Ohms (1)
- 2.3 mOhms (7)
- 2.4 mOhms (3)
- 2.6 mOhms (3)
- 2.7 mOhms (2)
- 20 mOhms (4)
- 22 mOhms (1)
- 23 mOhms (1)
- 25 mOhms (1)
- 250 mOhms (1)
- 26 mOhms (1)
- 26.5 mOhms (1)
- 270 mOhms (2)
- 280 mOhms (2)
- 290 mOhms (1)
- 3 mOhms (1)
- 3.2 mOhms (3)
- 3.3 mOhms (7)
- 3.4 mOhms (1)
- 3.5 mOhms (4)
- 3.6 mOhms (1)
- 3.7 mOhms (1)
- 3.8 mOhms (2)
- 3.9 mOhms (3)
- 30 mOhms (1)
- 32 mOhms (1)
- 33 mOhms (1)
- 340 mOhms (1)
- 350 mOhms (1)
- 380 mOhms (4)
- 385 mOhms (1)
- 390 mOhms (1)
- 399 mOhms (1)
- 4 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (2)
- 4.3 mOhms (2)
- 4.8 mOhms (2)
- 44 mOhms (3)
- 5 mOhms (2)
- 5.1 mOhms (1)
- 5.2 mOhms (1)
- 5.3 mOhms (1)
- 5.6 mOhms (2)
- 5.9 mOhms (1)
- 6.1 mOhms (1)
- 6.2 mOhms (1)
- 6.4 mOhms (1)
- 6.5 mOhms (2)
- 6.7 mOhms (1)
- 6.72 mOhms (1)
- 60 mOhms (2)
- 600 mOhms (1)
- 7 mOhms (4)
- 7.1 mOhms (4)
- 7.2 mOhms (1)
- 7.34 mOhms (1)
- 7.5 mOhms (1)
- 7.6 mOhms (1)
- 77.5 mOhms (1)
- 8 mOhms (1)
- 8.2 mOhms (1)
- 8.4 mOhms (1)
- 8.5 mOhms (1)
- 800 mOhms (1)
- 860 mOhms (1)
- 9 mOhms (1)
- 9.5 mOhms (1)
- 9.6 mOhms (1)
- 970 mOhms (1)
- 99 mOhms (1)
- Qg - Gate Charge :
-
- 100 nC (2)
- 104 nC (1)
- 106 nC (1)
- 107 nC (1)
- 117 nC (4)
- 118 nC (2)
- 12 nC (2)
- 120 nC (9)
- 130 nC (2)
- 133 nC (1)
- 135 nC (2)
- 137 nC (1)
- 14 nC, 107 nC (1)
- 140 nC (1)
- 143 nC (1)
- 15.3 nC (1)
- 150 nC (1)
- 155 nC (1)
- 160 nC (5)
- 165 nC (2)
- 167 nC (1)
- 170 nC (6)
- 180 nC (2)
- 190 nC (1)
- 200 nC (1)
- 207.1 nC (1)
- 210 nC (1)
- 211 nC (2)
- 216 nC (2)
- 22 nC (3)
- 22.9 nC (1)
- 23 nC (1)
- 240 nC (1)
- 243 nC (1)
- 25 nC (2)
- 27 nC (1)
- 271 nC (1)
- 279 nC (1)
- 29 nC (3)
- 300 nC (1)
- 31 nC (2)
- 32 nC (1)
- 34 nC (1)
- 340 nC (1)
- 37 nC (1)
- 377 nC (1)
- 39 nC (1)
- 411 nC (1)
- 42 nC (2)
- 43 nC (3)
- 44 nC (1)
- 44.7 nC (1)
- 45 nC (1)
- 460 nC (1)
- 47.3 nC (1)
- 51 nC (1)
- 54 nC (1)
- 56 nC (2)
- 57 nC (1)
- 58 nC (1)
- 61 nC (1)
- 62 nC (1)
- 63 nC (2)
- 64 nC (1)
- 64.7 nC (1)
- 65 nC (1)
- 66 nC (2)
- 7 nC (1)
- 73 nC (2)
- 76 nC (2)
- 79 nC (1)
- 81 nC (1)
- 82 nC (1)
- 83 nC (1)
- 85 nC (2)
- 86.7 nC (1)
- 88 nC (1)
- 97.3 nC (1)
- Ausgewählter Filter :
167 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
416
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 112 A | 5.9 mOhms | 3 V | 61 nC | Enhancement | OptiMOS | ||
|
|
|
Ein Angebot |
2,662
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | |||||||
|
|
|
Ein Angebot |
3,200
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||
|
|
|
Ein Angebot |
1,816
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | |||
|
|
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 99 mOhms | Enhancement | CoolMOS | ||||
|
|
|
Ein Angebot |
1,478
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 4.2 mOhms | 4.5 V | 117 nC | Enhancement | |||
|
|
|
Ein Angebot |
706
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
|
Ein Angebot |
765
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 23A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 140 mOhms | Enhancement | CoolMOS | ||||
|
|
|
Ein Angebot |
750
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 40 V 120 A STripFET Pwr MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.8 mOhms | 4.5 V | 340 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,973
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | |||||
|
|
|
Ein Angebot |
435
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,987
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 55V 49A 17.5mOhm 42nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | |||||||
|
|
|
Ein Angebot |
326
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 100V 180A 4.7mOhm 143nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | |||||||
|
|
|
Ein Angebot |
531
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 16A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 199 mOhms | Enhancement | CoolMOS | ||||
|
|
|
Ein Angebot |
229
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 10.7 mOhms | 65 nC | OptiMOS | ||||
|
|
|
Ein Angebot |
728
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||
|
|
|
Ein Angebot |
949
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||
|
|
|
Ein Angebot |
815
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch, 55V-0.005ohms 80A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | Enhancement | |||||
|
|
|
Ein Angebot |
2,302
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||
|
|
|
Ein Angebot |
480
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 900V 15A I2PAK-3 CoolMOS C3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 340 mOhms | Enhancement | CoolMOS | ||||
|
|
|
Ein Angebot |
734
Verfügbar auf Lager
|
Infineon / IR | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||
|
|
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 20.2 A | 190 mOhms | 73 nC | CoolMOS | ||||
|
|
|
Ein Angebot |
935
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A I2PAK-3 CoolMOS C6 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 280 mOhms | 43 nC | CoolMOS | ||||
|
|
|
Ein Angebot |
440
Verfügbar auf Lager
|
Infineon / IR | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | |||
|
|
|
Ein Angebot |
450
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement | |||||
|
|
|
Ein Angebot |
809
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2 mOhms | 3.7 V | 411 nC | Enhancement | StrongIRFET | ||||
|
|
|
Ein Angebot |
850
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | ||||
|
|
|
Ein Angebot |
800
Verfügbar auf Lager
|
Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | ||
|
|
|
Ein Angebot |
797
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET | ||||
|
|
|
Ein Angebot |
790
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.4 mOhms | 3.7 V | 279 nC | Enhancement | StrongIRFET |
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