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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
800
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 450 mOhms | 2 V to 4 V | 16 nC | Enhancement |
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