- Hersteller :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
340
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 190 mOhms | 63 nC | CoolMOS | ||||
|
Ein Angebot |
384
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement |
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