- Hersteller :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
200
Verfügbar auf Lager
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 382 A | 1.3 mOhms | 120 nC | Enhancement | |||||
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siehe | Nexperia | MOSFET N-Ch 30V 1.3 mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 120 A | 1.3 mOhms | 1.7 V | 243 nC |
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