Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
AUIRF1324WL
1+
$1.5640
10+
$1.3280
100+
$1.1520
250+
$1.0920
Ein Angebot
RFQ
200
Verfügbar auf Lager
Infineon Technologies MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms 20 V Through Hole TO-262-3 - 55 C   Tube 1 Channel Si N-Channel 24 V 382 A 1.3 mOhms   120 nC Enhancement
PSMN1R1-30EL,127
1+
$0.9640
10+
$0.8200
100+
$0.6560
500+
$0.5760
siehe
RFQ
Nexperia MOSFET N-Ch 30V 1.3 mOhms 20 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 120 A 1.3 mOhms 1.7 V 243 nC