- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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siehe | Nexperia | MOSFET N-CHAN 40V 100A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.6 mOhms | |||||
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siehe | Nexperia | MOSFET N-CHANNEL TRENCHMOS FET | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 3.6 mOhms | ||||||||
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siehe | Infineon Technologies | MOSFET N-Ch 30V 80A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | Enhancement | OptiMOS |
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