Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPI45N06S4L-08
1+
$0.4040
10+
$0.3428
100+
$0.2636
500+
$0.2328
siehe
RFQ
Infineon Technologies MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 16 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 45 A 7 mOhms 1.2 V 64 nC Enhancement OptiMOS
STI45N10F7
1+
$0.9520
10+
$0.7680
100+
$0.6160
500+
$0.5360
Ein Angebot
RFQ
1,000
Verfügbar auf Lager
STMicroelectronics MOSFET N-channel 100 V 0013 Ohm 45 A Pwr MOSFET 20 V SMD/SMT TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 45 A 18 mOhms 2.5 V 25 nC Enhancement  
IRFSL4229PBF
1+
$1.7040
10+
$0.9800
100+
$0.9240
250+
$0.8680
Ein Angebot
RFQ
49
Verfügbar auf Lager
Infineon / IR MOSFET MOSFT 250V 45A 48mOhm 72nC 30 V Through Hole TO-262-3 - 40 C + 175 C Tube 1 Channel Si N-Channel 250 V 45 A 48 mOhms   72 nC Enhancement  
IPI45N06S4L08AKSA1
siehe
RFQ
Infineon Technologies MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 16 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 45 A 7 mOhms 1.2 V 64 nC Enhancement