- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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siehe | Infineon Technologies | MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 100 V 0013 Ohm 45 A Pwr MOSFET | 20 V | SMD/SMT | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 2.5 V | 25 nC | Enhancement | ||||
|
Ein Angebot |
49
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement | |||||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7 mOhms | 1.2 V | 64 nC | Enhancement |
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