- Hersteller :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,302
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||
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Ein Angebot |
468
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 43A I2PAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 18 mOhms | Enhancement | OptiMOS |
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