- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 0.00378 Ohms (1)
- 1.6 mOhms (1)
- 12.6 mOhms (1)
- 2 mOhms (2)
- 2 Ohms (1)
- 2.1 mOhms (2)
- 2.2 mOhms (1)
- 2.3 mOhms (2)
- 2.4 mOhms (2)
- 2.7 mOhms (2)
- 2.8 mOhms (2)
- 22 mOhms (1)
- 26 mOhms (1)
- 3 mOhms (2)
- 3.2 mOhms (1)
- 3.3 mOhms (2)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 4.7 mOhms (1)
- 4.8 mOhms (1)
- 5.1 mOhms (1)
- 6.2 mOhms (1)
- 7 mOhms (4)
- 7.1 mOhms (1)
- 9.6 mOhms (1)
- Tradename :
- Ausgewählter Filter :
36 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
786
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | |||||||
|
Ein Angebot |
706
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
Ein Angebot |
728
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
|
Ein Angebot |
343
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 91 nC | |||||||||
|
Ein Angebot |
2,302
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
|
Ein Angebot |
809
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2 mOhms | 3.7 V | 411 nC | Enhancement | StrongIRFET | |||||
|
Ein Angebot |
850
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | |||||
|
Ein Angebot |
797
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET | |||||
|
Ein Angebot |
790
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.4 mOhms | 3.7 V | 279 nC | Enhancement | StrongIRFET | |||||
|
Ein Angebot |
980
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | ||||||
|
Ein Angebot |
386
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 50A I2PAK-3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 7 mOhms | 1.2 V | 29 nC | Enhancement | ||||
|
Ein Angebot |
377
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 165 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 100A I2PAK-3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | ||||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 90A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | OptiMOS | ||||||||||
|
Ein Angebot |
498
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 100A I2PAK-3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
1,600
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V 80a 0.0038 Ohms/VGS=10V | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 50A I2PAK-3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 7 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.1 mOhms | OptiMOS | |||||||||||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 165 nC | Enhancement | OptiMOS | ||||
|
Ein Angebot |
506
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 60V 270A 2.5mOhm 200nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC | ||||||||
|
Ein Angebot |
495
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2 Ohms | 2.8 V | 106 nC | OptiMOS | ||||
|
Ein Angebot |
407
Verfügbar auf Lager
|
Nexperia | MOSFET N-Ch 60V 2.2 mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.2 mOhms | 3 V | 137 nC | |||||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Nexperia | MOSFET N-Ch 60V 3 Standard level MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 83.4 A | 3 mOhms | 3 V | 130 nC | |||||
|
siehe | Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 58 A | 9.6 mOhms | 3 V | 22.9 nC | Enhancement | |||||
|
siehe | Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.00378 Ohms | 1.5 V | 230 nC | Enhancement | |||||
|
Ein Angebot |
746
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH 4V DRIVE SERIES | TO-262-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.7 mOhms | |||||||||||
|
Ein Angebot |
489
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 90A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 1.7 V | 133 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
436
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.8 mOhms | 2.2 V | 83 nC | Enhancement | OptiMOS |
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