- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
13 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,975
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | SOT-963-6 | Reel | Si | |||||||||||||||
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Ein Angebot |
31,364
Verfügbar auf Lager
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ON Semiconductor | MOSFET 20V Trench N-Channel | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 220 mA | 2.8 Ohms | Enhancement | |||||
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|
|
Ein Angebot |
63,108
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 450 mA | 1.9 Ohms | +/- 1 V | 0.4 nC, 0.5 nC | Enhancement | |||
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Ein Angebot |
19,800
Verfügbar auf Lager
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ON Semiconductor | MOSFET 20V Mosfet Complementary | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 220 mA | 1.5 Ohms, 5 Ohms | Enhancement | |||||
|
|
|
Ein Angebot |
8,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SOT963 20V 280MA TR | SMD/SMT | SOT-963-6 | Reel | Si | N-Channel | 20 V | 53 A | - | ||||||||||
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|
Ein Angebot |
10,194
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET DUAL N-CH 20V 0.23A | 10 V, 10 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 240 mA, 240 mA | 1.8 Ohms, 1.8 Ohms | 450 mV, 450 mV | Enhancement | ||||
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|
Ein Angebot |
10,484
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT963,10K | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 450 mA | 990 mOhms | 0.5 nC | Enhancement | ||||
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|
Ein Angebot |
8,325
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 200 mA | 5.5 Ohms | - 1.15 V | Enhancement | ||||
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|
Ein Angebot |
7,688
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N & P Enh FET Low RDSon 22.2pF | 12 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 220 mA, - 200 mA | 2.3 Ohms, 5.1 Ohms | 1 V | 0.38 nC, 0.35 nC | Enhancement | |||
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siehe | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | SOT-963-6 | Reel | Si | ||||||||||||||||
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Ein Angebot |
10,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 12 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 220 mA, - 200 mA | 2.3 Ohms, 5.1 Ohms | 1 V | 0.38 nC, 0.35 nC | Enhancement | |||
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Ein Angebot |
6,287
Verfügbar auf Lager
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Central Semiconductor | MOSFET 20V N-Ch P-Ch FET 8.0Vgs 125mW | 8 V, 8 V | SMD/SMT | SOT-963-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 160 mA, 140 mA | 1.5 Ohms, 4 Ohms | 400 mV, 1 V | 0.458 nC, 0.5 nC | Enhancement | Attomini | ||
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siehe | Central Semiconductor | MOSFET DUAL N-CHNL MOSFET | 8 V | SMD/SMT | SOT-963-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 160 mA | 3 Ohms | Enhancement | Attomini |
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