- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,332
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 100 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.6 A | 0.23 Ohms | - 2.5 V | 5.4 nC | Enhancement | TrenchFET | ||
|
|
Ein Angebot |
1,484
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS 30V Comp Pair | 20 V | SMD/SMT | SO-8 | - 55 C | + 100 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 8.5 A, 7 A | 14 mOhms, - 30 mOhms | 1 V, - 1 V | 16.1 nC, 21.1 nC | Enhancement |
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