- Hersteller :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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Ein Angebot |
6,827
Verfügbar auf Lager
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Infineon / IR | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 1.7 mOhms | 1.7 V | 51 nC | |||
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Ein Angebot |
1,372
Verfügbar auf Lager
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Infineon Technologies | MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC | 20 V | SMD/SMT | DirectFET-MT | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.4 mOhms | 46 nC | ||||||
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Ein Angebot |
4,800
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSF N CH 30V 34A DIRECTFET MT | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 192 A | 1.9 mOhms | 1.7 V | 51 nC | Directfet | ||
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siehe | Infineon Technologies | MOSFET 40V N-CH HEXFET 3.4mOhms 42nC | 20 V | SMD/SMT | DirectFET-MT | Reel | 1 Channel | Si | N-Channel | 40 V | 23 A | 4.1 mOhms | 42 nC | Directfet | ||||||
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siehe | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC | 12 V | SMD/SMT | DirectFET-MT | Reel | 1 Channel | Si | N-Channel | 20 V | 32 A | 1.8 mOhms | 47 nC |
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