- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,035
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||
|
|
|
Ein Angebot |
1,852
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 140 mA | 11 Ohms | - 1.5 V | - 3.6 nC | Enhancement | ||
|
|
|
Ein Angebot |
3,885
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||
|
|
|
Ein Angebot |
4,140
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement |
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