- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
993
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 144 A | 5.5 mOhms | 156 nC | PowerTrench | |||||
|
Ein Angebot |
1,704
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | +/- 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 156 nC | Enhancement | PowerDI | |||
|
siehe | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT |
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