- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,714
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | |||
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Ein Angebot |
3,326
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | Enhancement | |||
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Ein Angebot |
8,382
Verfügbar auf Lager
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Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.6 A | 20 mOhms | 400 mV | 13.4 nC | Enhancement | |||
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Ein Angebot |
1,500
Verfügbar auf Lager
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Nexperia | MOSFET BUK9M11-40E/MLFPAK/REEL 7" Q1/ | 10 V | SMD/SMT | LFPAK33-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 53 A | 7.5 mOhms | 1.4 V | 13.4 nC | Enhancement | |||
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Ein Angebot |
505
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 800V .95Ohm typ 3.6A Zener-protected | 30 V | SMD/SMT | PowerFLAT-5x6-VHV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3.6 A | 1.2 Ohms | 4 V | 13.4 nC |
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