- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,853
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 V-30V,TO252,2.5K | 20 V | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, 30 V | 9.4 A, 6.8 A | 32 mOhms, 53 mOhms | 17.4 nC | Enhancement | ||||
|
Ein Angebot |
1,923
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 10 mOhms | 800 mV | 17.4 nC | Enhancement |
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