- Hersteller :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V 191A 2MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 171 A | 2 mOhms | 1.5 V to 2.5 V | 83.6 nC | ||
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siehe | STMicroelectronics | MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 29 A | 105 mOhms | 83.6 nC |
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