- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
14 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
8,850
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,775
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | |||
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Ein Angebot |
3,163
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 180 A | 1.8 mOhms | - 2.2 V | 286 nC | Enhancement | OptiMOS | ||
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|
|
Ein Angebot |
1,573
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 180 A | 1.8 mOhms | - 2.2 V | 286 nC | Enhancement | |||
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Ein Angebot |
3,634
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | |||
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Ein Angebot |
543
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | |||
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Ein Angebot |
975
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | OptiMOS | ||
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|
|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,998
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET ID -2A, VDSS -30V | - 25 V to + 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 125 mOhms | - 2.2 V | 3.4 nC | Enhancement | |||
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Ein Angebot |
5,552
Verfügbar auf Lager
|
Toshiba | MOSFET Small Signal MOSFET V=30V, I-10A | - 25 V / + 20 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 32 mOhms | - 2.2 V | 13.6 nC | ||||||
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Ein Angebot |
39,569
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
8,995
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6 A | 33 mOhms | - 2.2 V | 23.2 nC | Enhancement | |||
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Ein Angebot |
4,000
Verfügbar auf Lager
|
Micro Commercial Components (MCC) | MOSFET P-Channel MOSFET, SOP-8 package | +/- 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 7.8 mOhms | - 2.2 V | 48 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement |
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