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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,300
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 20V Enh Mode FET | 8 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V, - 30 V | 400 mA, - 2.6 A | 4 Ohms, 300 mOhms | 650 mV, - 500 mV | 0.7 nC, 21 nC | Enhancement |
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