- Hersteller :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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Ein Angebot |
5,321
Verfügbar auf Lager
|
Toshiba | MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 12 V | SMD/SMT | uDFN-6 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4 A | 157 mOhms | |||||||
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Ein Angebot |
20,600
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 157 mOhms | - 1.1 V | 2.9 nC |
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