- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
Ein Angebot |
1,633
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 100V 15A 14MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 12.2 mOhms | 2 V | 20 nC | Enhancement | |||
|
|
Ein Angebot |
1,508
Verfügbar auf Lager
|
Texas Instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 12.2 mOhms | - 800 mV | 6.5 nC | Enhancement | NexFET | ||
|
|
Ein Angebot |
9,224
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 12.2 mOhms | OptiMOS | ||||||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 62 A | 12.2 mOhms | 1.7 V | 28.9 nC | Enhancement |
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