- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
1,743
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 6.4 mOhms | 43 nC | PowerTrench | ||||||
|
Ein Angebot |
2,685
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Common Drain N-Chan Power Trench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 6.4 mOhms | 3 V | 49 nC | PowerTrench Power Clip | |||||
|
Ein Angebot |
1,755
Verfügbar auf Lager
|
ON Semiconductor | MOSFET MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 100 A | 6.4 mOhms | 280 nC | ||||||
|
Ein Angebot |
4,395
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 40 V 7.6 mo FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 79 A | 6.4 mOhms | 1.7 V | 16.4 nC | Enhancement | ||||
|
Ein Angebot |
2,300
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.4 mOhms | 1 V | 41.3 nC | Enhancement | ||||
|
Ein Angebot |
2,134
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.4 mOhms | Enhancement | OptiMOS | |||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V/20V N-Channel PTNG MOSFET | +/- 20 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 57 A | 6.4 mOhms | 2 V | 30 nC | Enhancement | |||||
|
siehe | ON Semiconductor | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 82 A | 6.4 mOhms | - 2.6 V | 76 nC | Enhancement | |||||
|
siehe | Shindengen | MOSFET 60V, 60A EETMOS POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 6.4 mOhms | 3 V | 44 nC | Enhancement | ||||||
|
siehe | IXYS | MOSFET 180 Amps 100V 6.1 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement |
1 / 1 Seite