- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,248
Verfügbar auf Lager
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Infineon / IR | MOSFET 1 P-CH -40V HEXFET 15mOhms 73nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | - 3 V | 73 nC | Enhancement | ||
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Ein Angebot |
2,400
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT PCh -40V -10.5A 15mOhm 73nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | 73 nC | ||||||
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Ein Angebot |
6,383
Verfügbar auf Lager
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 41 mOhms | - 3 V | 14 nC | Enhancement | ||
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Ein Angebot |
394
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 10.5 A | 6.3 mOhms | 46 nC |
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