- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,155
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 30V.PCH POWER TRENCH MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 16 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
3,217
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 30V SinGLE P-Ch | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 20 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
622
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 30V P-Chan PowerTrench | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 26 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
1,011
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -60V 8.8A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 300 mOhms | Enhancement | SIPMOS | ||||
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Ein Angebot |
2,980
Verfügbar auf Lager
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Nexperia | MOSFET PMPB27EP/SOT1220/REEL 7" Q1/T1 | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 24 mOhms | - 1.5 V | 30 nC | Enhancement |
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