- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,602
Verfügbar auf Lager
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Diodes Incorporated | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | +/- 10 V, +/- 10 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 25 mOhms, 25 mOhms | - 1.4 V, - 1.4 V | 21.4 nC, 21.4 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement | OptiMOS | |||
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siehe | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement |
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