- Hersteller :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
5,310
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS | ||
|
|
Ein Angebot |
4,887
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | ||||||
|
|
Ein Angebot |
2,237
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 40V 10.9A N-CHANNEL MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10.9 A | 50 mOhms | Enhancement | |||||
|
|
siehe | Nexperia | MOSFET TAPE13 MOSFET | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10.9 A | 20 mOhms | Enhancement | ||||||
|
|
|
siehe | Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS | |||
|
|
siehe | Infineon Technologies | MOSFET N-Ch 700V 10.9A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 10.9 A | 340 mOhms | 4 V | 41 nC | CoolMOS |
1 / 1 Seite
