- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
3,725
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET -30V 20A P-Channel PowerTrench | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.5 A | 14.4 mOhms | Enhancement | PowerTrench | ||||
|
|
Ein Angebot |
2,990
Verfügbar auf Lager
|
ON Semiconductor | MOSFET SWITCHING DEVICE | SMD/SMT | ECH-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 9.5 A | 16 mOhms | |||||||||
|
|
siehe | Diodes Incorporated | MOSFET 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 9.5 A | 23 mOhms | - 0.8 V | 48.3 nC | Enhancement | PowerDI |
1 / 1 Seite
