- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,401
Verfügbar auf Lager
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 36 A | 3.8 mOhms | 65 nC | Enhancement | ||||||
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Ein Angebot |
1,718
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 7.5 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||
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Ein Angebot |
359
Verfügbar auf Lager
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | ||
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Ein Angebot |
2,765
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | |||
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Ein Angebot |
2,260
Verfügbar auf Lager
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Diodes Incorporated | MOSFET FET BVDSS 25V-30V P-Ch 36A 7.5Vgs 6324 | +/- 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 5.7 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||
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Ein Angebot |
1,262
Verfügbar auf Lager
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STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a D... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17.5 mOhms | - 2.5 V | 22 nC | Enhancement | ||||
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siehe | Renesas Electronics | MOSFET MP-3ZK PoTr-MOSFET Low | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17 mOhms | Enhancement |
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