- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
8 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,326
Verfügbar auf Lager
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Infineon / IR | MOSFET Automotive Logic Le mOhm, 13 nC Qg, DPAK | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC | |||||||||
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Ein Angebot |
2,863
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET SO-8 COMP N-P-CH | 20 V, 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 9.3 A | 18 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
535
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.3 A | 300 mOhms | 23.3 nC | Enhancement | ||||
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Ein Angebot |
6,454
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 50.6 nC | Enhancement | |||
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Ein Angebot |
617
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 12V N-Ch Enh FET 2426pF 27.3nC | 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 9.3 A | 41 mOhms | 0.53 V | 27.3 nC | Enhancement | |||
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Ein Angebot |
1,735
Verfügbar auf Lager
|
Infineon / IR | MOSFET Automotive Logic Le mOhm, 13 nC Qg, DPAK | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC | |||||||||
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siehe | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 460 mOhms | 2.5 V | 20 nC | Enhancement | ||||
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siehe | Infineon / IR | MOSFET Automotive Power MOSFET; 250V 345mOhm | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 250 V | 9.3 A | 275 mOhms |
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