- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,890
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 72 A | 19 mOhms | 2 V | 59 nC | Enhancement | PowerTrench | |||
|
Ein Angebot |
657
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
|
Ein Angebot |
266
Verfügbar auf Lager
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET SWITCH | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 18.6 mOhms | 100 nC | ||||||||
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Ein Angebot |
2,990
Verfügbar auf Lager
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Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 72 A | 3 mOhms | 1.2 V | 15 nC | Enhancement | ||||
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Ein Angebot |
6,000
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | |||||
|
Ein Angebot |
250
Verfügbar auf Lager
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Infineon / IR | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 200 V | 72 A | 100 nC | ||||||||||
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siehe | IXYS | MOSFET 72 Amps 200V 33 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 200 V | 72 A | 33 Ohms | ||||||||||||
|
Ein Angebot |
217
Verfügbar auf Lager
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Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 72 A | 10.2 mOhms | 3 V | 69.4 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 3.8 mOhms | Enhancement | |||||||
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siehe | IXYS | MOSFET 72 Amps 500V 0.055 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 72 A | 55 mOhms | Enhancement | HyperFET | ||||||
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siehe | IXYS | MOSFET 72 Amps 200 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement |
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