- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,633
Verfügbar auf Lager
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | |||
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Ein Angebot |
1,071
Verfügbar auf Lager
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Infineon / IR | MOSFET 100V SINGLE N-CH 9mOhms 83nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | |||||||
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Ein Angebot |
588
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 4 V | 120 nC | ||||||
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Ein Angebot |
570
Verfügbar auf Lager
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Vishay Semiconductors | MOSFET 60V 97A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 97 A | 0.005 Ohms | 1.5 V | 125 nC | Enhancement | TrenchFET | ||
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siehe | Vishay Semiconductors | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 97 A | 0.005 Ohms | 1.5 V | 150 nC | Enhancement |
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