- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
6 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
7,885
Verfügbar auf Lager
|
Nexperia | MOSFET TAPE-7 MOSFET | - 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | - 2.8 V | Enhancement | ||||
|
Ein Angebot |
788
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Chnl 240V | 40 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 480 mA | 9 Ohms | Enhancement | |||||
|
Ein Angebot |
943
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P Channel | 40 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 9 Ohms | Enhancement | |||||
|
siehe | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 260 mA | 6 Ohms | - 800 mV | 3.7 nC | Enhancement | ||||
|
siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | Enhancement | ||||||
|
Ein Angebot |
1,756
Verfügbar auf Lager
|
Microchip Technology | MOSFET 240V 8Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 316 mA | 8 Ohms | Enhancement |
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