- Hersteller :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
26,553
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SC89-6 COMP NCH & PCH POWER T | 12 V, 8 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 600 mA | 700 mOhms, 1.2 Ohms | Enhancement | PowerTrench | ||||
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Ein Angebot |
26,945
Verfügbar auf Lager
|
ON Semiconductor | MOSFET 20V +3.9A/-4.4A Complementary | 12 V, 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 3.9 A | 77 mOhms, 85 mOhms | Enhancement | |||||
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Ein Angebot |
16,950
Verfügbar auf Lager
|
ON Semiconductor | MOSFET 20V/-8V 0.63A/-.775A Complementary | 12 V, 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 8 V | 630 mA | 375 mOhms, 300 mOhms | 1.3 nC, 2.2 nC | Enhancement | ||||
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|
|
Ein Angebot |
6,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET 20V/-8V 0.63A/-.775A Complementary | 12 V, 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 27 V, - 10.5 V | 630 mA, 775 mA | 290 mOhms, 220 mOhms | 0.92 V, - 0.83 V | 1.3 nC, 2.2 nC | Enhancement |
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