Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Qualification Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
CSD17313Q2Q1T
1+
$0.2320
10+
$0.2060
25+
$0.1976
100+
$0.1580
250+
$0.1468
Ein Angebot
RFQ
1,204
Verfügbar auf Lager
Texas Instruments MOSFET Automotive 30-V N-Channel NexFET? Power MOSFET 6-WS... 10 V, 8 V SMD/SMT WSON-FET-6 - 55 C + 150 C Reel AEC-Q100 1 Channel Si N-Channel 30 V 5 A 24 mOhms 1.3 V 2.1 nC Enhancement NexFET
CSD17308Q3T
1+
$0.3360
10+
$0.3032
25+
$0.2932
100+
$0.2364
250+
$0.2212
Ein Angebot
RFQ
1,226
Verfügbar auf Lager
Texas Instruments MOSFET 30V N-Channel NexFET? Power MOSFET 8-VSON-CLIP... 10 V, 8 V SMD/SMT VSON-Clip-8 - 55 C + 150 C Reel   1 Channel Si N-Channel 30 V 60 A 8.2 mOhms 1.3 V 3.9 nC Enhancement NexFET
CSD16340Q3T
1+
$0.5080
10+
$0.4560
25+
$0.4400
100+
$0.3560
250+
$0.3328
Ein Angebot
RFQ
195
Verfügbar auf Lager
Texas Instruments MOSFET 25V, -55 to 150 10 V, 8 V SMD/SMT VSON-Clip-8 - 55 C + 150 C Reel   1 Channel Si N-Channel 25 V 60 A 3.8 mOhms 600 mV 9.2 nC Enhancement