- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
15 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
674
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT9 30V/12V Nch PowerTrench SyncFET | +/- 16 V | SMD/SMT | Power56-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 30 V | 218 A | 0.9 mOhms | 0.8 V | 139 nC | Enhancement | ||||
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Ein Angebot |
8,850
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,775
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | |||
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Ein Angebot |
3,163
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 180 A | 1.8 mOhms | - 2.2 V | 286 nC | Enhancement | OptiMOS | ||
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|
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Ein Angebot |
1,573
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 180 A | 1.8 mOhms | - 2.2 V | 286 nC | Enhancement | |||
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Ein Angebot |
3,634
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | |||
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Ein Angebot |
543
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | |||
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Ein Angebot |
451
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | +/- 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.9 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
975
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | OptiMOS | ||
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|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
39,569
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 90 A | 3.6 mOhms | - 2.2 V | 176 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,500
Verfügbar auf Lager
|
ON Semiconductor | MOSFET T6 60V LL DPAK | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 22.8 mOhms | 1.2 V | 7 nC | Enhancement | |||
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Ein Angebot |
498
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | +/- 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.9 mOhms | - 2.2 V | 234 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.5 mOhms | - 2.2 V | 104 nC | Enhancement | ||||
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Ein Angebot |
2,998
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin | +/- 16 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 25 V | 124 A | 1.4 mOhms | 1 V | 63 nC | Enhancement |
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