- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
4,311
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG | 20 V | SMD/SMT | PowerFLAT-2x2-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 40 mOhms | 1 V | 3.6 nC | |||
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Ein Angebot |
737
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-2x2-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4 A | 70 mOhms | 4.5 V | 7.8 nC | Enhancement | ||
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Ein Angebot |
3,000
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 60 V, 0.019 Ohm typ., 7 A STripFET F7 Power M... | 20 V | SMD/SMT | PowerFLAT-2x2-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 7 A | 21 mOhms | 2 V | 8 nC | Enhancement |
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