- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
2,560
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.95 mOhms | 1.9 V | 57 nC | |||||
|
Ein Angebot |
2,290
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 9 mOhms | 2 V | 57 nC | Enhancement | PowerTrench | |||
|
Ein Angebot |
760
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 57 nC | |||||||
|
Ein Angebot |
807
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
482
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | ||||
|
Ein Angebot |
4,992
Verfügbar auf Lager
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | ||||
|
siehe | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | OptiMOS | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement | |||||
|
siehe | Shindengen | MOSFET 100V, 13A EETMOS POWER MOSFET | 20 V | SMD/SMT | LA-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 16 mOhms | 2 V | 57 nC | Enhancement | ||||||
|
siehe | Shindengen | MOSFET 40V, 60A EETMOS POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 3.3 mOhms | 2 V | 57 nC | Enhancement |
1 / 1 Seite