- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
- Ausgewählter Filter :
28 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,090
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
2,842
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
656
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1 A | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
9,990
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET 30V .56A 1500M | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 500 mA | 1.5 Ohms | 1.4 V | 1.15 nC | ||||
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Ein Angebot |
273
Verfügbar auf Lager
|
IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | |||||
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Ein Angebot |
1,731
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||
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Ein Angebot |
41
Verfügbar auf Lager
|
IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | ||||
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Ein Angebot |
334
Verfügbar auf Lager
|
IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | |||||
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Ein Angebot |
2,278
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 3.1A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 3.1 A | 1.5 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
33
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1 A | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
444
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||
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Ein Angebot |
7,426
Verfügbar auf Lager
|
Microchip Technology | MOSFET 100V 1.5Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 730 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
4,395
Verfügbar auf Lager
|
Microchip Technology | MOSFET 100V 1.5Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 100 V | 500 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
1,166
Verfügbar auf Lager
|
Microchip Technology | MOSFET 60V 1.5Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
53,291
Verfügbar auf Lager
|
ON Semiconductor | MOSFET 30V 250mA Dual N-Channel | 20 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 250 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
8,900
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 240V 20Vgss | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 480 mA | 1.5 Ohms | 1 V | 6.6 nC | Enhancement | |||
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Ein Angebot |
26,900
Verfügbar auf Lager
|
ON Semiconductor | MOSFET 30V 270mA N-Channel | 20 V | SMD/SMT | SC-70-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 270 mA | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
3,405
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1 A | 1.5 Ohms | Enhancement | |||||
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Ein Angebot |
1,976
Verfügbar auf Lager
|
Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 640 mA | 1.5 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 540 mA | 1.5 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 540 mA | 1.5 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 640 mA | 1.5 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 640 mA | 1.5 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 540 mA | 1.5 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 540 mA | 1.5 Ohms | Enhancement | ||||||
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siehe | IXYS | MOSFET 7 Amps 900V 1.5W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7 A | 1.5 Ohms | Enhancement | HyperFET | |||||
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Ein Angebot |
1,205
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 3.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
1,275
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS |
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