- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Ausgewählter Filter :
20 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
8,556
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 30V DUAL N-CH. FET 18 MO SO8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 17 mOhms | Enhancement | PowerTrench SyncFET | ||||
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Ein Angebot |
756
Verfügbar auf Lager
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | |||
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Ein Angebot |
100
Verfügbar auf Lager
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IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | |||
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Ein Angebot |
2,750
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 38 A | 17 mOhms | Enhancement | PowerTrench | ||||
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Ein Angebot |
5,598
Verfügbar auf Lager
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | ||||
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Ein Angebot |
7,337
Verfügbar auf Lager
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Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||
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Ein Angebot |
629
Verfügbar auf Lager
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Toshiba | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||
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Ein Angebot |
4,836
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET SO-8 P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 17 mOhms | Enhancement | |||||
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Ein Angebot |
12,000
Verfügbar auf Lager
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Infineon / IR | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC | |||||||
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siehe | Nexperia | MOSFET N-CHAN 55V 44A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 17 mOhms | |||||||
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siehe | IXYS | MOSFET 140A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
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Ein Angebot |
480
Verfügbar auf Lager
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Nexperia | MOSFET N-CHAN 30V 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 50 A | 17 mOhms | ||||||
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siehe | IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
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siehe | Diodes Incorporated | MOSFET Single -30V P-Ch Enh FET -20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 17 mOhms | - 1 V | 60.4 nC | Enhancement | ||||
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siehe | IXYS | MOSFET 200V 120A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 200V 105A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 105 A | 17 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 200V 120A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 200V 120A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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siehe | ROHM Semiconductor | MOSFET 30V 9A N-CHAN DUAL | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 9 A | 17 mOhms | Enhancement | ||||||
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Ein Angebot |
293
Verfügbar auf Lager
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Infineon / IR | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC |
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